SAMSUNG 1.92TB 128-LAYER V-NAND TLC PCIE 4.0 X4 NVME M.2 22110 PM9A3 SERIES 128 LAYER VNAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD ( 1920GB ) - 1DWPD KEY M PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 1.4 video

SAMSUNG 1.92TB 128-LAYER V-NAND TLC PCIE 4.0 X4 NVME M.2 22110 PM9A3 SERIES 128 LAYER VNAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD ( 1920GB ) - 1DWPD KEY M PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 1.4 (MZ-1L21T90)

Part Number: MZ-1L21T90 
Condition: Refurbished 

            Availability:  In Stock

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as of 02/22/2026 07:00:00 PM PST

$1,050.00

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Product Details:

SAMSUNG 1.92TB 128-LAYER V-NAND TLC PCIE 4.0 X4 NVME M.2 22110 PM9A3 SERIES 128 LAYER VNAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD ( 1920GB ) - 1DWPD KEY M PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 1.4

MANUFACTURER: SAMSUNG
PART NUMBER: MZ-1L21T90
CAPACITY: 1.92TB ( 1920GB )
FLASH MEMORY TYPE: TRIPLE LEVEL CELL ( 128-LAYER V-NAND TLC )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME 1.4 )
INTERFACE: PCIE GEN4 X4 ( PCI-E 4.0 X4 / PCI EXPRESS )
READING SPEED: 5500MB/S
WRITING SPEED: 2000MB/S
RANDOM READ ( IOPS ): 800,000
RANDOM WRITE ( IOPS ): 85,000
TECHNOLOGY: SOLID STATE DRIVE ( SSD )
HARD DRIVE SERIES / CLASS: PM9A3 SERIES
SIZE FORM FACTOR: M.2 22110
CONNECTOR INTERFACE: M KEY
ENCLOSURE: INTERNAL
ADDITIONAL INFORMATION: 1DWPD

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