Product Details:
SAMSUNG 1.92TB V-NAND TLC PCIE GEN4 X4 NVME U.2 SFF-8639 2.5 INCH SMALL FORM FACTOR SFF ENTERPRISE CLASS PM9A3 SERIES READ INTENSIVE RI VNAND TRIPLE LEVEL CELL READS 6800MB/S WRITES 2700MB/S SOLID STATE DRIVE SSD ( 1920GB ) - 1DWPD PCI-E 4.0 NON VOLATILE MEMORY EXPRESS 1.4 ( DUAL LABEL / DELL / SAMSUNG )
MANUFACTURER: DELL / SAMSUNG
PART NUMBER: MZQL21T9HCJR-00AD3-DELL
HARD DRIVE TRAY: TRAY / CADDY NOT INCLUDED
SPECIFICATIONS
CAPACITY: 1.92TB ( 1920GB )
FLASH MEMORY TYPE: TRIPLE LEVEL CELL ( V-NAND TLC )
INTERFACE: PCI-E GEN4 ( PCI-E 4.0 )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME 1.4 )
PHYSICAL INTERFACE: U.2 ( SFF-8639 )
TECHNOLOGY: SOLID STATE DRIVE ( SSD )
READING SPEED: 6800MB/S
WRITING SPEED: 2700MB/S
SIZE FORM FACTOR: 2.5 INCH SFF
HARD DRIVE SERIES / CLASS: ENTERPRISE CLASS / PM9A3 SERIES
PERFORMANCE TYPE: 1DWPD, READ INTENSIVE RI