SAMSUNG 960GB TLC PCIE GEN4 X4 NVME M.2 22110 PM9A3 SERIES READ INTENSIVE RI V6 128 LAYER V-NAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD - KEY M 1DWPD 5YR PCI-E 4.0 NON VOLATILE MEMORY EXPRESS 1.4 TRIPLE LEVEL CELL ( DUAL LABEL / DEL / SAMSUNG ) video

SAMSUNG 960GB TLC PCIE GEN4 X4 NVME M.2 22110 PM9A3 SERIES READ INTENSIVE RI V6 128 LAYER V-NAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD - KEY M 1DWPD 5YR PCI-E 4.0 NON VOLATILE MEMORY EXPRESS 1.4 TRIPLE LEVEL CELL ( DUAL LABEL / DEL / SAMSUNG ) (MZ-1L29600-DELL)

Part Number: MZ-1L29600-DELL 
Condition: Refurbished 

            Availability:  In Stock

Qty in stock:

as of 10/05/2026 08:08:00 PM PDT

$1,074.00

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Product Details:

SAMSUNG 960GB TLC PCIE GEN4 X4 NVME M.2 22110 PM9A3 SERIES READ INTENSIVE RI V6 128 LAYER V-NAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD - KEY M 1DWPD 5YR PCI-E 4.0 NON VOLATILE MEMORY EXPRESS 1.4 TRIPLE LEVEL CELL ( DUAL LABEL / DEL / SAMSUNG )

MANUFACTURER: DELL / SAMSUNG
PART NUMBER: MZ-1L29600-DELL

SPECIFICATIONS
CAPACITY: 960GB
FLASH MEMORY TYPE: TRIPLE LEVEL CELL ( 128L TLC NAND )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME 1.4 )
INTERFACE: PCIE GEN4 X4 ( G4 4 LANES )
READING SPEED: 5,500MB/S
WRITING SPEED: 2,000MB/S
TECHNOLOGY: SOLID STATE DRIVE ( SSD )
HARD DRIVE SERIES / CLASS: PM9A3 SERIES
PERFORMANCE: READ INTENSIVE RI
SIZE FORM FACTOR: M.2 22110
CONNECTOR INTERFACE: M KEY
ENDURANCE: 1DWPD 5YR ( WHEN NEW )

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Get a quote for SAMSUNG 960GB TLC PCIE GEN4 X4 NVME M.2 22110 PM9A3 SERIES READ INTENSIVE RI V6 128 LAYER V-NAND TRIPLE LEVEL CELL READS 5500MB/S WRITES 2000MB/S SOLID STATE DRIVE SSD - KEY M 1DWPD 5YR PCI-E 4.0 NON VOLATILE MEMORY EXPRESS 1.4 TRIPLE LEVEL CELL ( DUAL LABEL / DEL / SAMSUNG )

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