SAMSUNG 512GB MLC PCIE GEN3 X4 NVME M.2 2280 SM961 SERIES VNAND 2BIT MULTI LEVEL CELL READS 3200MB/S WRITES 1700MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M 8GB/S UP TO 4 LANES PCI-E 3.0 X4 NON VOLATILE MEMORY EXPRESS ( MZVKW512HMJP ) ( DUAL LABEL / HP / SAMSUNG ) video
SAMSUNG 512GB MLC PCIE GEN3 X4 NVME M.2 2280 SM961 SERIES VNAND 2BIT MULTI LEVEL CELL READS 3200MB/S WRITES 1700MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M 8GB/S UP TO 4 LANES PCI-E 3.0 X4 NON VOLATILE MEMORY EXPRESS ( MZVKW512HMJP ) ( DUAL LABEL / HP / SAMSUNG ) preview image #0
SAMSUNG 512GB MLC PCIE GEN3 X4 NVME M.2 2280 SM961 SERIES VNAND 2BIT MULTI LEVEL CELL READS 3200MB/S WRITES 1700MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M 8GB/S UP TO 4 LANES PCI-E 3.0 X4 NON VOLATILE MEMORY EXPRESS ( MZVKW512HMJP ) ( DUAL LABEL / HP / SAMSUNG ) preview image #1

SAMSUNG 512GB MLC PCIE GEN3 X4 NVME M.2 2280 SM961 SERIES VNAND 2BIT MULTI LEVEL CELL READS 3200MB/S WRITES 1700MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M 8GB/S UP TO 4 LANES PCI-E 3.0 X4 NON VOLATILE MEMORY EXPRESS ( MZVKW512HMJP ) ( DUAL LABEL / HP / SAMSUNG ) (MZ-VKW5120-HP)

Part Number: MZ-VKW5120-HP

Condition: Refurbished

Availability: In Stock

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as of 10/10/2025 02:04:39 AM PDT

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SAMSUNG 512GB MLC PCIE GEN3 X4 NVME M.2 2280 SM961 SERIES VNAND 2BIT MULTI LEVEL CELL READS 3200MB/S WRITES 1700MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M 8GB/S UP TO 4 LANES PCI-E 3.0 X4 NON VOLATILE MEMORY EXPRESS ( MZVKW512HMJP ) ( DUAL LABEL / HP / SAMSUNG )

MANUFACTURER: HP / SAMSUNG
PART NUMBER: MZ-VKW5120-HP
SSD CONTROLLER: POLARIS
CAPACITY: 512GB
FLASH MEMORY TYPE: MULTI LEVEL CELL ( 3-BIT MLC )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME )
INTERFACE: PCI-EXPRESS GEN3 X4 ( PCIE G3 4 LANES )
INTERFACE BANDWIDTH: 32GB/S ( 8GB/S PER LANE )
READING SPEED: 3200MB/S
WRITING SPEED: 1700MB/S
TECHNOLOGY: SOLID STATE DRIVE ( SSD )
SIZE FORM FACTOR: M.2 2280
CONNECTOR INTERFACE: M KEY
HARD DRIVE SERIES / CLASS: SM961 SERIES
ENCLOSURE: INTERNAL
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