SAMSUNG 256GB MLC PCIE GEN3 X4 NVME M.2 2280 PM961 SERIES VNAND 3BIT MULTI LEVEL CELL READS 2800MB/S WRITES 1100MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M PCI-E 3.0 4 LANES 8GB/S PER LANE NON VOLATILE MEMORY EXPRESS ( MZVLW256HEHP-000H1 ) ( DUAL LABEL / HP / SAMSUNG ) video

SAMSUNG 256GB MLC PCIE GEN3 X4 NVME M.2 2280 PM961 SERIES VNAND 3BIT MULTI LEVEL CELL READS 2800MB/S WRITES 1100MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M PCI-E 3.0 4 LANES 8GB/S PER LANE NON VOLATILE MEMORY EXPRESS ( MZVLW256HEHP-000H1 ) ( DUAL LABEL / HP / SAMSUNG ) (MZ-VLW2560-HP)

Part Number: MZ-VLW2560-HP 
Condition: Refurbished 

            Availability:  In Stock

Qty in stock:

as of 09/21/2025 02:06:04 AM PDT

$85.00

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Product Details:

SAMSUNG 256GB MLC PCIE GEN3 X4 NVME M.2 2280 PM961 SERIES VNAND 3BIT MULTI LEVEL CELL READS 2800MB/S WRITES 1100MB/S SOLID STATE DRIVE SSD - POLARIS CONTROLLER KEY M PCI-E 3.0 4 LANES 8GB/S PER LANE NON VOLATILE MEMORY EXPRESS ( MZVLW256HEHP-000H1 ) ( DUAL LABEL / HP / SAMSUNG )

MANUFACTURER: HP / SAMSUNG
PART NUMBER: MZ-VLW2560-HP
SSD CONTROLLER: POLARIS
CAPACITY: 256GB
FLASH MEMORY TYPE: MULTI LEVEL CELL ( 3-BIT MLC )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME )
INTERFACE: PCI-EXPRESS GEN3 X4 ( PCIE G3 4 LANES )
INTERFACE BANDWIDTH: 32GB/S ( 8GB/S PER LANE )
READING SPEED: 2800MB/S
WRITING SPEED: 1100MB/S
TECHNOLOGY: SOLID STATE DRIVE ( SSD )
SIZE FORM FACTOR: M.2 2280
CONNECTOR INTERFACE: M KEY
HARD DRIVE SERIES / CLASS: PM961 SERIES
ENCLOSURE: INTERNAL

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