SAMSUNG 2TB V-NAND TLC PCIE 4.0 X4 NVME M.2 2280 SSD 990 PRO VNAND TRIPLE LEVEL CELL READS 7450MB/S WRITES 6900MB/S SOLID STATE DRIVE ( 2000GB ) - PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 2.0 ( MZ-V9P2T0B/AM ) video

SAMSUNG 2TB V-NAND TLC PCIE 4.0 X4 NVME M.2 2280 SSD 990 PRO VNAND TRIPLE LEVEL CELL READS 7450MB/S WRITES 6900MB/S SOLID STATE DRIVE ( 2000GB ) - PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 2.0 ( MZ-V9P2T0B/AM ) (MZ-V9P2T0-RETAIL)

Part Number: MZ-V9P2T0-RETAIL 
Condition: Retail 

            Availability:  In Stock

Qty in stock:

as of 04/19/2026 12:00:00 AM PDT

$495.00

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Product Details:

SAMSUNG 2TB V-NAND TLC PCIE 4.0 X4 NVME M.2 2280 SSD 990 PRO VNAND TRIPLE LEVEL CELL READS 7450MB/S WRITES 6900MB/S SOLID STATE DRIVE ( 2000GB ) - PCI-E GEN4 NON VOLATILE MEMORY EXPRESS 2.0 ( MZ-V9P2T0B/AM )

MANUFACTURER: SAMSUNG
PART NUMBER: MZ-V9P2T0-RETAIL
CAPACITY: 2TB ( 2000GB )
FLASH MEMORY TYPE: TRIPLE LEVEL CELL ( V-NAND TLC )
PROTOCOL: NON VOLATILE MEMORY EXPRESS ( NVME 2.0 )
INTERFACE: PCIE GEN4 X4 ( PCI-E 4.0 X4 / PCI EXPRESS )
READING SPEED: 7450MB/S
WRITING SPEED: 6900MB/S
RANDOM READ ( IOPS QD32 THREAD 16 ): 1,400,000
RANDOM WRITE ( IOPS QD32 THREAD 16 ): 1,550,000
HARD DRIVE SERIES / CLASS: SSD 990 PRO SERIES
SIZE FORM FACTOR: M.2 2280
CONNECTOR INTERFACE: M KEY
ENCLOSURE: INTERNAL

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